Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures
نویسندگان
چکیده
منابع مشابه
Gate-tunable resonant tunneling in double bilayer graphene heterostructures.
We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current-voltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron nitride (hBN) dielectric. An analysis of the heterostructure band alignment using individual layer densities, along with experimentally determined layer chemical potenti...
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A theory is developed for calculating vertical tunneling current between two sheets of bilayer graphene separated by a thin, insulating layer of hexagonal boron nitride, neglecting many-body effects. Results are presented using physical parameters that enable comparison of the theory with recently reported experimental results. Observed resonant tunneling and negative differential resistance in...
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ژورنال
عنوان ژورنال: Nano Letters
سال: 2014
ISSN: 1530-6984,1530-6992
DOI: 10.1021/nl503756y